TC1601 rev4_20060510 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 1 / 4 2w high linearity and high efficiency gaas power fets features 2w typical power at 6 ghz photo enlargement linear power gain: g l = 12 db typical at 6 ghz high linearity: ip3 = 43 dbm typical at 6 ghz via holes source ground suitable for high reliability application breakdown voltage: bv dgo 15 v lg = 0.35 m, wg = 5 mm high power added efficiency: pae 43 % for class a operation lg = 0.35 m, wg = 5 mm tight vp ranges control high rf input power handling capability 100 % dc tested description the TC1601 is a pseudomorphic high electron mobility transistor (phemt) gaas power fet, which has high linearity and high power added efficiency. the device is processed with a propriety via-hole process, which provides low thermal resistance and low inductance. the short gate length enables the device to be used in circuits up to 20 ghz. all devices are 100 % dc tested to assure consistent quality. bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. backside gold plating is compatible with standard ausn die-attach. typical applications include commercial and military high performance power amplifier. electrical specifications (t a =25 c) symbol conditions min typ max unit p 1db output power at 1db gain compression point , f = 6 ghz v ds = 8 v, i ds = 500 ma 32.5 33 dbm g l linear power gain, f = 6 ghz v ds = 8 v, i ds = 500 ma 11 12 db ip3 intercept point of the 3 rd -order intermodulation, f = 6 ghz v ds = 8 v, i ds =500 ma,*p scl = 20 dbm 43 dbm pae power added efficiency at 1db compression power, f = 6 ghz 43 % i dss saturated drain-source current at v ds = 2 v, v gs = 0 v 1.2 a g m transconductance at v ds = 2 v, v gs = 0 v 850 ms v p pinch-off voltage at v ds = 2 v, i d = 10 ma -1.7** volts bv dgo drain-gate breakdown voltage at i dgo = 2.5 ma 15 18 volts r th thermal resistance 6 c/w note: * p scl : output power of single carrier level. * *for the tight control of the pinch-off voltage . TC1601?s are divided into 3 groups: (1) TC1601p1519 : vp = -1.5v to -1.9v (2) TC1601p1620 : vp = -1.6v to -2.0v (3) TC1601p1721 : vp = -1.7v to -2.1v in addition, the customers may specify their requirements.
TC1601 rev4_20060510 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 2 / 4 absolute maximum ratings (t a =25 c) recommanded operating condition symbol parameter rating v ds drain-source voltage 12 v v gs gate-source voltage -5 v i d drain current 1.2 a p t continuous dissipation 7.7 w t ch channel temperature 175 c t stg storage temperature - 65 c to +175 c symbol parameter rating v ds drain to source voltage 8 v i d drain current 500 ma chip dimensions units: micrometers gate pad: 76.0 x 59.5 chip thickness: 50 drain pad: 86.0 x 76.0 g g d d g g d d 1060 12 470 12
TC1601 rev4_20060510 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 3 / 4 typical scattering parameter (v ds = 8 v, i ds = 500 ma) frequency s11 s21 s12 s22 (ghz) mag ang mag ang mag ang mag ang 0.05 0.99574 -28.397 37.17 165.02 0.0078177 75.215 0.16856 -68.237 0.1 0.98587 -53.672 34.038 151.75 0.014318 62.138 0.26521 -97.116 0.2 0.96544 -90.648 26.53 132.47 0.022319 43.232 0.3948 -125.14 0.3 0.95271 -113.2 20.626 120.66 0.026028 31.814 0.45652 -139.36 0.4 0.94572 -127.35 16.544 113.1 0.027836 24.636 0.48709 -147.65 0.5 0.94174 -136.8 13.697 107.88 0.028806 19.799 0.50388 -152.91 0.6 0.93933 -143.46 11.638 104.03 0.029372 16.331 0.51405 -156.46 0.7 0.93779 -148.39 10.095 101.03 0.029723 13.717 0.52079 -158.96 0.8 0.93676 -152.16 8.901 98.595 0.029952 11.664 0.5256 -160.78 0.9 0.93605 -155.14 7.9524 96.548 0.030104 10.001 0.52927 -162.13 1 0.93554 -157.54 7.1819 94.779 0.030208 8.6153 0.53225 -163.14 1.1 0.93518 -159.53 6.5443 93.216 0.030278 7.4363 0.53479 -163.92 1.2 0.93491 -161.19 6.0082 91.811 0.030325 6.4143 0.53706 -164.51 1.3 0.93472 -162.59 5.5514 90.528 0.030354 5.5145 0.53916 -164.95 1.4 0.93458 -163.81 5.1576 89.341 0.03037 4.7118 0.54115 -165.29 1.5 0.93448 -164.86 4.8147 88.233 0.030375 3.9874 0.54309 -165.54 1.6 0.93441 -165.78 4.5133 87.19 0.030371 3.3272 0.545 -165.72 1.7 0.93437 -166.6 4.2465 86.2 0.030361 2.7205 0.54691 -165.84 1.8 0.93435 -167.32 4.0085 85.254 0.030345 2.1586 0.54882 -165.92 1.9 0.93435 -167.97 3.7949 84.347 0.030324 1.635 0.55076 -165.96 2 0.93436 -168.55 3.6022 83.473 0.030298 1.1442 0.55273 -165.97 3 0.93501 -172.24 2.3682 75.87 0.02987 -2.6275 0.57477 -165.17 4 0.93615 -174.09 1.7392 69.39 0.02924 -5.282 0.60072 -164.02 5 0.93754 -175.19 1.3557 63.538 0.02848 -7.316 0.62891 -163.13 6 0.93905 -175.95 1.0969 58.161 0.02764 -8.8846 0.65763 -162.62 7 0.9406 -176.5 0.91049 53.193 0.02676 -10.055 0.68559 -162.45 8 0.94213 -176.94 0.77029 48.597 0.02587 -10.869 0.71196 -162.56 9 0.94358 -177.29 0.66149 44.343 0.02499 -11.358 0.73629 -162.88 10 0.94495 -177.6 0.57506 40.401 0.02415 -11.554 0.7584 -163.33 11 0.94621 -177.87 0.50515 36.746 0.02334 -11.487 0.77829 -163.88 12 0.94736 -178.11 0.44776 33.3519 0.02259 -11.185 0.79607 -164.47 13 0.94841 -178.34 0.40006 30.196 0.0219 -10.675 0.81191 -165.1 14 0.94935 -178.54 0.36001 27.254 0.02126 -9.985 0.82598 -165.74 15 0.95019 -178.73 0.32605 24.506 0.02068 -9.1377 0.83848 -166.37 16 0.95096 -178.91 0.29703 21.933 0.02015 -8.1559 0.84959 -167 17 0.95164 -179.08 0.27204 19.5189 0.01968 -7.06 0.85948 -167.6 18 0.95225 -179.23 0.25036 17.248 0.01926 -5.8689 0.8683 -168.19 * the data does not include gate, drain and source bond wires.
TC1601 rev4_20060510 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 4 / 4 small signal model, v ds = 8 v, i ds = 500 ma schemati fet parameter lg = 0.0035 nh rs = 0.23 ohm rg = 0.3 ohm ls = 0.0013 nh cgs = 7.84 pf cds = 0.864 pf ri = 0.487 ohm rds = 51 ohm cgd = 0.44 pf rd = 0.402 ohm gm = 840 ms ld = 0.006 nh t = 3.9 psec rg rd rs ri rds ls ld lg cgs cgd cds gm t
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